Tokyo, Japan

Hidehiro Nakagawa

This inventor holds 1 USPTO granted patent. Top assignee: Dai Nippon Printing Co., Ltd.. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidehiro Nakagawa. Retrieved from https://idiyas.com/inventor/hidehiro-nakagawa-vxvf3lx8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Innovations of Hidehiro Nakagawa

Introduction

Hidehiro Nakagawa is a prominent inventor based in Tokyo, Japan. He is known for his contributions to the field of organic semiconductor devices. His innovative work has led to the development of technologies that enhance charge carrier transport properties in organic materials.

Latest Patents

One of Nakagawa's notable patents is for an organic semiconductor device. This invention provides an organic semiconductor layer that facilitates easy charge carrier injection. The device comprises a first electrode and a second electrode facing each other, with an organic semiconductor layer positioned in between. A charge carrier injection promoting layer is formed between the organic semiconductor layer and at least one of the electrodes, enhancing the overall performance of the device.

Career Highlights

Nakagawa is associated with Dai Nippon Printing Co., Ltd., where he has made significant contributions to research and development. His work has been instrumental in advancing the capabilities of organic semiconductor technologies.

Collaborations

He has collaborated with notable colleagues, including Akihiko Nakasa and Hiroki Maeda, to further enhance the innovation landscape in his field.

Conclusion

Hidehiro Nakagawa's work in organic semiconductor devices exemplifies the impact of innovative thinking in technology. His contributions continue to influence advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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