Takasaki, Japan

Hidefumi Itoh


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 55(Granted Patents)


Company Filing History:


Years Active: 1979

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1 patent (USPTO):Explore Patents

Title: Hidefumi Itoh: Innovator in Semiconductor Technology

Introduction

Hidefumi Itoh is a prominent inventor based in Takasaki, Japan. He is known for his contributions to semiconductor technology, particularly in the development of insulated gate field effect transistors. His innovative work has led to advancements in electronic devices and systems.

Latest Patents

Itoh holds a patent for an "Insulated gate field effect transistor with source field shield." This invention involves a unique design of an insulated gate field effect transistor that features a source region and a drain region of P-conductivity type. These regions are strategically placed on a semiconductor substrate of N-conductivity type, enhancing the performance and efficiency of the transistor.

Career Highlights

Itoh is associated with Hitachi, Ltd., a leading company in technology and electronics. His work at Hitachi has allowed him to explore and develop cutting-edge technologies in the semiconductor field. With a focus on innovation, he has made significant contributions that have impacted the industry.

Collaborations

Throughout his career, Itoh has collaborated with notable colleagues, including Takeaki Okabe and Isao Yoshida. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Hidefumi Itoh's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Hitachi, along with collaborations with esteemed colleagues, highlight his role as a key figure in the field. His inventions continue to influence the development of electronic devices, showcasing the importance of research and innovation in technology.

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