Santa Clara, CA, United States of America

Hideaki Fukuzawa


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2020-2024

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3 patents (USPTO):

Title: Innovations of Hideaki Fukuzawa in Magnetic Random Access Memory

Introduction

Hideaki Fukuzawa is a prominent inventor based in Santa Clara, CA (US). He has made significant contributions to the field of magnetic random access memory (MRAM). With a total of 3 patents, his work focuses on enhancing the performance and stability of memory technologies.

Latest Patents

Fukuzawa's latest patents include a groundbreaking design for a free layer structure in MRAM. This design features a perpendicularly magnetized magnetic tunnel junction (p-MTJ) with a free layer (FL) that interfaces with a MgO tunnel barrier and a Mo or W Hk enhancing layer. The composition of the FL includes FeCoB, with specific ratios of elements to achieve a magnetoresistive ratio greater than 100%, a resistance x area product of less than 5 ohm/□m, and a switching voltage of less than 0.15V. This innovative structure ensures thermal stability up to 400° C during annealing, making it a significant advancement in memory technology.

Career Highlights

Fukuzawa is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to push the boundaries of memory technology. His expertise in MRAM has positioned him as a key player in the industry, contributing to advancements that enhance data storage capabilities.

Collaborations

Fukuzawa has collaborated with notable coworkers, including Vignesh Sundar and Yu-Jen Wang. Their combined efforts have led to innovative solutions in the field of semiconductor technology.

Conclusion

Hideaki Fukuzawa's contributions to MRAM technology exemplify the importance of innovation in the semiconductor industry. His patents reflect a commitment to enhancing memory performance and stability, paving the way for future advancements.

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