Hexiang Dong

This inventor holds 1 USPTO granted patent. Top assignee: Sichuan University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hexiang Dong. Retrieved from https://idiyas.com/inventor/hexiang-dong-cnj5qb7j

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hexiang Dong: Innovator in Surface Defect Analysis

Introduction

Hexiang Dong is a notable inventor recognized for his contributions to the field of surface defect analysis. He is affiliated with Sichuan University, where he has made significant strides in research and innovation. His work primarily focuses on developing advanced methods for analyzing surface defects in materials.

Latest Patents

One of Hexiang Dong's key patents is titled "Automatic Calculation Method for Surface Defect Area of Wet Blue Skin Based on DeepLabV3+ Model." This innovative approach utilizes deep learning techniques to enhance the accuracy and efficiency of defect area calculations, which is crucial in various industrial applications.

Career Highlights

Throughout his career, Hexiang Dong has demonstrated a commitment to advancing technology in his field. His research has not only contributed to academic knowledge but has also practical implications for industries that rely on high-quality material processing.

Collaborations

Hexiang Dong has collaborated with esteemed colleagues, including Wei Lin and Changping Huang. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and expertise, further enhancing the impact of their research.

Conclusion

In summary, Hexiang Dong is a prominent inventor whose work in surface defect analysis is paving the way for advancements in material processing. His innovative patent and collaborative efforts highlight his dedication to improving industry standards.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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