Germering, Germany

Hermann Sigmund

This inventor holds 1 USPTO granted patent. Top assignee: Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hermann Sigmund. Retrieved from https://idiyas.com/inventor/hermann-sigmund

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Hermann Sigmund - Innovator in Integrated Circuit Technology

Introduction

Hermann Sigmund is a notable inventor based in Germering, Germany. He has made significant contributions to the field of integrated circuit technology. His innovative approach has led to the development of a unique method that enhances the production of silicate layers in integrated circuits.

Latest Patents

Hermann holds a patent for a "Method for producing a silicate layer in an integrated circuit." This invention showcases his expertise and commitment to advancing technology in the semiconductor industry. He has 1 patent to his name, reflecting his innovative contributions.

Career Highlights

Hermann is associated with the Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., a leading research organization in Germany. His work at this esteemed institution has allowed him to collaborate with other experts in the field and contribute to groundbreaking research.

Collaborations

Hermann has worked alongside his coworker, Armin Klumpp, to further enhance the research and development of integrated circuit technologies. Their collaboration has been instrumental in pushing the boundaries of what is possible in this field.

Conclusion

Hermann Sigmund's contributions to integrated circuit technology through his innovative methods and collaborations highlight his importance in the field. His work continues to influence advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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