This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignees: Imec Vzw, Other. Active years: 2003-2004.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:

Years Active: 2003-2004
Title: The Innovations of Herman Meynen
Introduction
Herman Meynen is a notable inventor based in Linden, Belgium. He has made significant contributions to the field of microelectronics, particularly in the development of integrated circuits. With a total of two patents to his name, Meynen's work showcases his expertise and innovative spirit.
Latest Patents
Meynen's latest patents include an integrated circuit having a silicon carbide (SiC) layer and a method for the removal of silicon carbide layers. The integrated circuit patent focuses on a method for fabricating an SiC etch stop layer. This involves converting an exposed part of the carbide-silicon layer into an oxide-silicon layer by exposing it to an oxygen-containing plasma, followed by the removal of the oxide-silicon layer from the substrate. His second patent details a method for the removal of silicon carbide layers, where the exposed part of a carbide-silicon layer is converted into an oxide-silicon layer through similar plasma exposure, and subsequently removed from the substrate.
Career Highlights
Throughout his career, Meynen has worked with various organizations, including the Interuniversitair Microelektronica Centrum (imec). His experience in these institutions has allowed him to refine his skills and contribute to groundbreaking advancements in microelectronics.
Collaborations
Meynen has collaborated with notable colleagues such as Serge Vanhaelemeersch and Philip D Dembowski. These partnerships have likely enriched his work and fostered innovation in his projects.
Conclusion
Herman Meynen's contributions to the field of microelectronics through his patents and collaborations highlight his role as an influential inventor. His innovative methods for working with silicon carbide layers demonstrate the potential for advancements in integrated circuit technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile