Lexington, MA, United States of America

Herbert Von Hartel

This inventor holds 1 USPTO granted patent. Top assignee: Coulter Information Systems, Inc.. Active years: 1976.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Herbert Von Hartel. Retrieved from https://idiyas.com/inventor/herbert-von-hartel

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 1976

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1 patent (USPTO):Explore Patents

Title: Herbert Von Hartel: Innovator in Sputtering Technology

Introduction

Herbert Von Hartel is a notable inventor based in Lexington, MA (US). He has made significant contributions to the field of sputtering technology, particularly in methods that enhance the efficiency and effectiveness of sputtering chambers.

Latest Patents

Herbert Von Hartel holds a patent for a "Method and apparatus for supplying background gas in a sputtering chamber." This innovative patent addresses the challenges of maintaining stoichiometry in sputtered materials. The invention involves a target framed by a metallic shield, which confines sputtering to a forward direction. The background gas is injected directly inside the shield, allowing it to flow over the target immediately upon entry into the chamber. A perforated manifold running the length of the target edge releases the background gas along its length, optimizing the sputtering process.

Career Highlights

Herbert Von Hartel is associated with Coulter Information Systems, Inc., where he applies his expertise in sputtering technology. His work has contributed to advancements in the field, showcasing his commitment to innovation and research.

Collaborations

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Conclusion

Herbert Von Hartel's contributions to sputtering technology through his innovative patent demonstrate his role as a key inventor in this specialized field. His work continues to influence advancements in material deposition techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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