Henry C Pao

Title: The Innovative Contributions of Henry C. Pao

Introduction

Henry C. Pao is a notable inventor based in Los Altos, California. He has made significant contributions to the field of semiconductor technology. His work has led to advancements that enhance the functionality of electronic devices.

Latest Patents

Henry C. Pao holds a patent for a "Combined DMOS and a vertical bipolar transistor device and fabrication." This invention relates to an improved DMOS semiconductor type device that can function both as a DMOS (unipolar) type device and as a bipolar transistor device. The design features two separated source regions of N+ conductivity, each surrounded by a P- type region. This configuration provides a pair of channels between each N+ source region and a common N type drain region. The gate electrode is strategically placed over both channels, allowing electrons to flow from the N+ source regions into the common N type drain region when a proper bias is applied.

Career Highlights

Henry C. Pao is associated with Supertex, Inc., where he has contributed to various innovative projects. His work has been instrumental in advancing semiconductor technology, particularly in the development of devices that combine the functionalities of DMOS and bipolar transistors.

Collaborations

Henry has collaborated with notable coworkers such as Richard A. Blanchard and Benedict C. Choy. Their collective efforts have contributed to the success of various projects within the semiconductor industry.

Conclusion

Henry C. Pao's innovative work in semiconductor technology exemplifies the impact of inventors in advancing electronic devices. His patent for a combined DMOS and bipolar transistor device showcases his expertise and commitment to innovation.