Plano, TX, United States of America

Henry B Morris

This inventor holds 5 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1976-1982.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Henry B Morris. Retrieved from https://idiyas.com/inventor/henry-b-morris-wg0ltvoh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 5

Forward Citations = 94(Granted Patents)


Company Filing History:


Years Active: 1976-1982

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5 patents (USPTO):Explore Patents

Title: Innovations of Henry B. Morris

Introduction

Henry B. Morris is a notable inventor based in Plano, TX, who has made significant contributions to the field of semiconductor technology. He holds a total of 5 patents, showcasing his expertise and innovative spirit in developing advanced memory elements.

Latest Patents

One of his latest patents involves non-volatile semiconductor memory elements and methods of making them. This invention is characterized by a non-volatile metal-insulator-semiconductor that features a unique combination of insulating layers, including a titanium dioxide layer covered by a silicon dioxide layer. In one embodiment, the insulator combination also includes a second layer of silicon dioxide situated between the titanium dioxide and the semiconductor. Additionally, another embodiment incorporates a layer of silicon nitride positioned between the titanium dioxide layer and the semiconductor. The fabrication of these memory elements employs a novel sequence of steps for forming multiple dielectric layers. The titanium dioxide, specifically of the rutile type, is created by evaporating titanium metal onto the silicon dioxide and oxidizing the titanium in an oxygen-rich environment at elevated temperatures. Writing to the memory is achieved by injecting charge into the titanium dioxide layer, which shifts the threshold voltage of the structure. Erasure is performed by forcing the injected charge back into the semiconductor to recombine with majority carriers, with the charge being either electrons or holes depending on the semiconductor type. This innovative memory element boasts lower write/erase voltages, shorter write/erase times, and enhanced memory retentivity.

Career Highlights

Henry B. Morris is associated with Texas Instruments Corporation, where he has contributed to various advancements in semiconductor technology. His work has been instrumental in pushing the boundaries of what is possible in memory element design and functionality.

Collaborations

Throughout his career, Morris has collaborated with notable colleagues, including Robert T. Bate and Milo R. Johnson. These partnerships have fostered an environment of innovation and creativity, leading to groundbreaking developments in the field.

Conclusion

Henry B. Morris stands out as a prominent inventor in the semiconductor industry, with a focus on non-volatile memory technologies. His contributions continue to influence the landscape of memory element design and functionality.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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