Company Filing History:
Years Active: 1980
Title: The Innovations of Henri B Assalit
Introduction
Henri B Assalit is a notable inventor based in Torrance, California. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that showcases his expertise and creativity.
Latest Patents
Henri B Assalit holds a patent for an "Open tube aluminum oxide disc diffusion." This invention involves the formation of a p-type region in a semiconductor body through the diffusion of aluminum from an aluminum oxide source in an open tube process. The patent describes the use of both ceramic aluminum oxide and sapphire sources, with an inert atmosphere of argon and hydrogen providing stable results. An alternative embodiment of the invention allows for deep diffusion characteristics of aluminum while achieving a high surface concentration of boron by utilizing a boron nitride wafer carrier.
Career Highlights
Assalit has had a distinguished career at General Electric Company, where he has applied his knowledge and skills to advance semiconductor technologies. His work has been instrumental in enhancing the performance and reliability of various electronic devices.
Collaborations
Throughout his career, Henri B Assalit has collaborated with talented individuals such as Mike F Chang and David K Hartman. These partnerships have fostered innovation and contributed to the success of their projects.
Conclusion
Henri B Assalit is a remarkable inventor whose contributions to semiconductor technology have made a lasting impact. His patent for the open tube aluminum oxide disc diffusion exemplifies his innovative spirit and dedication to advancing the field.