The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1980
Filed:
May. 21, 1979
Applicant:
Inventors:
Mike F Chang, Liverpool, NY (US);
David K Hartman, Manlius, NY (US);
Richard W Kennedy, Skaneateles, NY (US);
Alfred Roesch, Auburn, NY (US);
Henri B Assalit, Torrance, CA (US);
Assignee:
General Electric Company, Auburn, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148189 ; 148187 ; 148190 ; 252950 ; 252951 ;
Abstract
A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable results. An alternative embodiment provides both the deep diffusion characteristics of aluminum with the high surface concentration of boron by using a boron nitride wafer carrier.