This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2020.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2020
Title: Heng Li - Innovator in Molecular Beam Epitaxy Technology
Introduction
Heng Li is a prominent inventor based in Xiamen, China. He has made significant contributions to the field of molecular beam epitaxy, particularly under strong magnetic fields. His innovative work has led to advancements in the characterization and growth of materials, which are crucial for various applications in technology and materials science.
Latest Patents
Heng Li holds a patent titled "Molecular beam epitaxy under vector strong magnetic field and in-situ characterization apparatus thereof." This invention discloses a molecular beam epitaxy system that operates under a vector strong magnetic field, along with an in-situ characterization apparatus. The apparatus features an inverted T-shaped ultrahigh vacuum growth and characterization chamber, which is compact and equipped with a strong magnet. It includes a sample stage capable of rotating to align with the magnetic field and various molecular beam sources, effectively addressing the challenges posed by the small volume of the strong magnetic field chamber.
Career Highlights
Throughout his career, Heng Li has focused on developing technologies that enhance the efficiency and effectiveness of molecular beam epitaxy. His work has been instrumental in overcoming technical challenges associated with the integration of multiple components in a confined space. This innovation has opened new avenues for research and development in material sciences.
Collaborations
Heng Li has collaborated with notable colleagues, including Zhiming Wu and Ting Chen. Their combined expertise has contributed to the advancement of research in molecular beam epitaxy and related fields.
Conclusion
Heng Li's contributions to molecular beam epitaxy technology demonstrate his commitment to innovation and excellence in the field. His patent reflects a significant advancement that addresses critical challenges in material growth and characterization. His work continues to influence the landscape of materials science and engineering.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile