Company Filing History:
Years Active: 1996-2001
Title: Hemraj K Hingarh: Innovator in Memory Technology
Introduction
Hemraj K Hingarh is a notable inventor based in Saratoga, CA (US). He has made significant contributions to the field of memory technology, holding a total of 3 patents. His innovative work focuses on improving the efficiency and performance of dynamic random access memory (DRAM) systems.
Latest Patents
Hingarh's latest patents include groundbreaking inventions such as the "DRAM based refresh-free ternary CAM" and "Read zero DRAM." The DRAM based refresh-free ternary CAM introduces a ternary state content addressable memory (CAM) cell that incorporates two DRAM cells. This design features a dedicated port for refreshing the DRAM cells, addressing problematic power consumption and voltage swings typically found in conventional CAMs. The adjustable voltage level of the swing line allows for a balance between power consumption and speed.
The "Read zero DRAM" patent presents a dynamic random access memory that is optimized to access a 'zero' faster than a 'one.' This innovative design ensures that a voltage level 'zero' is maintained on the bit line, improving access time without requiring changes to the conventional cell layout. The sense amplifier and write driver are designed to amplify 'zero' data faster than 'one' data, enhancing overall performance.
Career Highlights
Throughout his career, Hemraj K Hingarh has worked with several companies, including Silicon Access Networks, Inc. and Nsoft Systems, Inc. His experience in these organizations has contributed to his expertise in memory technology and innovation.
Collaborations
Hingarh has collaborated with notable professionals in the field, including Subramani Kengeri and Ven L Lee. These collaborations have further enriched his work and contributed to advancements in memory technology.
Conclusion
Hemraj K Hingarh is a distinguished inventor whose contributions to memory technology have led to significant advancements in the field. His innovative patents reflect a commitment to improving efficiency and performance in DRAM systems.