Company Filing History:
Years Active: 2020
Title: Hemant Gandhi: Innovator in Strained Germanium Films
Introduction
Hemant Gandhi is a notable inventor based in Cambridge, MA, who has made significant contributions to the field of materials science. His work primarily focuses on the fabrication of strained germanium films, which have important applications in semiconductor technology.
Latest Patents
Gandhi holds a patent titled "N-type doping of strained epitaxial germanium films through co-implantation and nanosecond pulsed laser melting." This patent discloses a method for fabricating an n-doped strained germanium (Ge) film. The process involves depositing a strained Ge film on an underlying substrate, implanting at least one electron-donating dopant into the Ge film, and exposing the implanted film to laser pulses with a pulse width ranging from about 1 nanosecond to about 100 milliseconds. This technique generates a substantially crystalline strained Ge film, with the potential for melting and recrystallization of the implanted Ge film. The resultant Ge film can have a thickness ranging from about 10 nanometers to about 1 micron.
Career Highlights
Hemant Gandhi is affiliated with Harvard College, where he conducts research and develops innovative technologies. His work has garnered attention for its potential to enhance the performance of semiconductor devices.
Collaborations
Gandhi has collaborated with esteemed colleagues such as Eric Mazur and Michael J Aziz, contributing to a rich environment of innovation and research at Harvard College.
Conclusion
Hemant Gandhi's contributions to the field of strained germanium films exemplify the intersection of innovation and practical application in semiconductor technology. His patent reflects a significant advancement in the fabrication methods of these materials, showcasing his role as a leading inventor in this domain.