Dieburg, Germany

Helmut Schuelke

This inventor holds 1 USPTO granted patent. Top assignee: Siemens Aktiengesellschaft. Active years: 1988.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Helmut Schuelke. Retrieved from https://idiyas.com/inventor/helmut-schuelke

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: Helmut Schuelke and His Gas Laser Patent.

Introduction

Helmut Schuelke is an inventor associated with Dieburg, Germany, and Siemens Aktiengesellschaft. His patent work includes an invention intended to improve the efficiency and power density of a gas laser.

Latest Patents

Schuelke is credited with 1 patent, titled “Gas Laser with Different Position-Dependent Mutual Spacings Between [Capacitive Electrodes].” The invention concerns a gas laser with transverse high-frequency excitation. It uses capacitive electrodes arranged around the discharge space in a cavity resonator. By varying the spacing between the electrodes according to their position, the structure is designed to produce an electrical field strength proportional to the neutral particle density, helping maintain a roughly position-independent field strength for each density across the discharge space.

Career Highlights

Schuelke’s listed patent is associated with Siemens Aktiengesellschaft and focuses on the design of gas-laser discharge systems. The patent describes an electrode arrangement intended to improve laser efficiency and power density.

Collaborations

Klemens Schmitt and Gerd Herziger are identified as Schuelke’s coworkers.

Conclusion

Helmut Schuelke’s recorded invention reflects a focused contribution to gas-laser technology through a position-dependent electrode arrangement designed to improve discharge conditions and performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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