Company Filing History:
Years Active: 1988
Title: Heike Gierisch: Innovator in CMOS Technology
Introduction
Heike Gierisch is a notable inventor based in Unterschleissheim, Germany. She has made significant contributions to the field of integrated circuit technology, particularly in the development of processes for producing complementary metal-oxide-semiconductor (CMOS) devices.
Latest Patents
Heike Gierisch holds a patent for a process for producing CMOS having doped polysilicon gate by outdiffusion. This innovative process is designed for the production of highly integrated circuits containing both p-channel and n-channel MOS transistors. The gate electrodes consist of a doped double layer of polysilicon and metal silicide. The gates are doped with boron and produced through diffusion from a metal silicide layer that has been previously doped with boron via ion implantation into the undoped polysilicon layer. The metal silicide layer, preferably made of tantalum silicide, is covered with a masking layer of SiO₂. The structuring of the boron-doped silicide gate and the masking layer occurs after the diffusion of boron atoms. This process effectively avoids undesired boron penetration effects that can significantly impact the short channel properties of transistors. It is particularly useful for producing CMOS circuits with high packing density.
Career Highlights
Heike Gierisch is currently employed at Siemens Aktiengesellschaft, where she continues to advance her research and development efforts in semiconductor technology. Her work has been instrumental in enhancing the performance and efficiency of integrated circuits.
Collaborations
Heike has collaborated with her coworker, Franz Neppl, to further innovate in the field of CMOS technology. Their partnership has contributed to the successful development of advanced semiconductor processes.
Conclusion
Heike Gierisch's contributions to CMOS technology exemplify her dedication to innovation in the semiconductor industry. Her patented processes are paving the way for more efficient and compact integrated circuits.