San Francisco, CA, United States of America

Heidi Lynn Walti

This inventor holds 1 USPTO granted patent. Top assignee: Aliphcom. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heidi Lynn Walti. Retrieved from https://idiyas.com/inventor/heidi-lynn-walti

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: The Innovative Journey of Heidi Lynn Walti

Introduction

Heidi Lynn Walti is a notable inventor based in San Francisco, CA. She has made significant contributions to the field of technology, particularly with her innovative designs and user interfaces. Her work has garnered attention for its creativity and functionality.

Latest Patents

Heidi holds a patent for a "Display screen or portion thereof with graphical user interface." This patent showcases her ability to blend aesthetics with practical application, enhancing user experience in digital devices. She has 1 patent to her name, reflecting her commitment to innovation.

Career Highlights

Heidi is currently employed at Aliphcom, a company known for its cutting-edge technology solutions. Her role at Aliphcom allows her to further explore her passion for invention and design. Her contributions to the company have been instrumental in developing user-friendly interfaces that resonate with consumers.

Collaborations

Heidi has collaborated with talented individuals in her field, including her coworker Hyang S Kim. These partnerships have fostered a creative environment that encourages the exchange of ideas and innovation.

Conclusion

Heidi Lynn Walti's journey as an inventor exemplifies the spirit of innovation and creativity. Her work continues to influence the technology landscape, making her a significant figure in the realm of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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