Suwon-si, South Korea

Heesub Kim

This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heesub Kim. Retrieved from https://idiyas.com/inventor/heesub-kim-av8wacdr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 4.6

ph-index = 1


Company Filing History:


Years Active: 2026

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3 patents (USPTO):Explore Patents

Title: Heesub Kim and His Semiconductor Patents.

Introduction

Heesub Kim is an inventor based in Suwon-si, South Korea. His patent work includes semiconductor device structures and manufacturing methods. He is associated with Samsung Electronics Ltd. and has 3 patents.

Latest Patents

One of Kim’s latest patents is titled “Semiconductor Device Including Isolation Pattern Formed Based on Insulating Layer and Method for Manufacturing the Same.” The disclosed method describes forming semiconductor and dummy structures on a substrate, creating an isolation pattern in the space left after removing the dummy structure, and building gate, source/drain, and contact structures. The contacts are positioned on both sides of the isolation pattern and connect to the source/drain patterns.

Career Highlights

Kim’s listed patent portfolio comprises 3 patents. His work at Samsung Electronics Ltd. is associated with semiconductor device design and fabrication processes.

Collaborations

Kim’s listed coworkers include Eunho Cho and Gunho Jo. Their names are provided as professional collaborators, though specific joint projects are not detailed in the supplied information.

Conclusion

Heesub Kim’s patent activity reflects a focus on semiconductor devices and manufacturing methods, including isolation, gate, source/drain, and contact structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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