Busan, South Korea

Heesub Kim

This inventor holds 2 USPTO granted patents and 6 published patent applications. Top assignees: Samsung Electronics Co., Ltd., Global Standard Technology Co., Ltd.. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heesub Kim. Retrieved from https://idiyas.com/inventor/heesub-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Heesub Kim - Innovator in Semiconductor Technology

Introduction

Heesub Kim is an inventor based in Suwon-si, South Korea. He is focused on advancements in semiconductor technology. Although he currently holds no granted patents, his work in the field is noteworthy.

Latest Patent Applications

Heesub Kim has submitted several patent applications related to semiconductor devices. One of his applications describes a semiconductor device that includes a substrate with an active region extending in a first direction. The device features a gate structure that extends in a second direction, intersecting both the first direction and the active region. Additionally, it includes a source/drain region positioned on a side of the gate structure, along with a contact structure that is electrically connected to the source/drain region. An insulating structure is also present, which contacts a first contact side surface of the contact structure, with an inclined portion that increases the width of the contact structure toward the substrate.

Another application details a semiconductor device that comprises a substrate and an active pattern. This pattern includes a lower pattern extending in a first direction and multiple sheet patterns above the lower pattern, spaced apart in a second direction that is substantially perpendicular to the first. The gate structure in this application includes a gate electrode and a gate insulating film, which partially surrounds the sheet patterns. Furthermore, it features a first gate capping pattern above the sheet patterns, a gate spacer along the side wall of the gate structure, and a second gate capping pattern extending along the upper surfaces of both the gate structure and the first gate capping pattern.

Conclusion

Heesub Kim is an emerging inventor in the semiconductor field, with innovative patent applications that showcase his contributions to technology. His work has the potential to influence future developments in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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