Suwon, South Korea

Heeju Na

This inventor holds 1 USPTO granted patent. Top assignees: Samsung Electronics Ltd., Sungkyunkwan University. Active years: 2026.


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Heeju Na: Innovator in Memory Device Technology

Introduction

Heeju Na is a notable inventor based in Suwon, South Korea. He has made significant contributions to the field of memory devices, particularly in error detection and correction technologies. His innovative work has led to the development of a patented memory device that enhances data integrity in memory systems.

Latest Patents

Heeju Na holds a patent for a "Memory device for supporting triple adjacent error detection, memory system having the same, and operating method thereof." This invention includes a memory cell array with multiple memory cells connected to word lines and bit lines. The device features an error correction circuit that performs error correction on data read from the memory cell array. The circuit is capable of executing a 1-bit error correction operation, a 2-bit error detection operation, or a 3-bit error detection operation using a specially configured parity check matrix. The arrangement of the columns in the parity check matrix follows an odd-odd-even degree order, with the leading one of each row structured in a stepped manner.

Career Highlights

Heeju Na has worked with prominent organizations, including Samsung Electronics Ltd. and Sungkyunkwan University. His experience in these institutions has allowed him to refine his skills and contribute to cutting-edge research in memory technology.

Collaborations

Heeju Na has collaborated with Kijun Lee, a talented woman in the field, to further advance their research and development efforts in memory devices.

Conclusion

Heeju Na's innovative contributions to memory device technology demonstrate his expertise and commitment to enhancing data integrity through advanced error detection and correction methods. His work continues to influence the field and pave the way for future advancements.

Profile summary based on public USPTO records.
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