Daejeon, South Korea

Heejoo Han

This inventor holds 1 USPTO granted patent. Top assignees: Korea Advanced Institute of Science and Technology, Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heejoo Han. Retrieved from https://idiyas.com/inventor/heejoo-han

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Heejoo Han and His Work in Nitrogen Oxide Reduction.

Introduction

Heejoo Han is an inventor based in Daejeon, South Korea. His patent work addresses methods and reactor systems for reducing nitrogen oxide concentrations in samples.

Latest Patents

The provided information lists one patent for Han: “Method of Reducing Nitrogen Oxide Concentration in Sample, Bioreactor, and Plug Flow Reactor.” The invention describes contacting a nitrogen oxide-containing sample with a microorganism in a bioreactor to reduce its nitrogen oxide concentration. It specifies the use of Fe(II)(L)-NO, a complex in which a chelating agent, iron, and nitric oxide are chelated, with the chelating agent represented by L. Han is credited with 1 patent in the information provided.

Career Highlights

Han’s listed affiliations include Samsung Electronics and the Korea Advanced Institute of Science and Technology. The available details do not specify his roles or dates of employment at either organization.

Collaborations

The listed coworkers associated with Han are Seung Hoon Song and Woo Yong Shim. The provided information does not describe their specific contributions to the patent.

Conclusion

Heejoo Han’s listed patent focuses on a microorganism-based approach to reducing nitrogen oxide concentrations, alongside bioreactor and plug flow reactor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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