Bucheon, South Korea

Hee K Park


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: Hee K Park: Innovator in Bipolar Transistor Fabrication

Introduction

Hee K Park is a notable inventor based in Bucheon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of bipolar transistors. His innovative approach has led to advancements that enhance the performance and efficiency of these essential electronic components.

Latest Patents

Hee K Park holds a patent for a "Fabrication method of bipolar transistor." This invention relates to a method that allows for the emitter of high-concentrated n-type material to be closely contacted with the extrinsic base of high-concentrated p-type material. The unique structure is achieved by making the emitter self-aligned through the side wall under-cut of the nitride layer, utilizing double layers of low-temperature oxide and nitride.

Career Highlights

Hee K Park is currently employed at Samsung Semiconductor & Telecommunication Co., Ltd. His work at this leading company has positioned him at the forefront of semiconductor innovation. With a focus on improving fabrication methods, he continues to contribute to the advancement of technology in the semiconductor industry.

Collaborations

Hee K Park has collaborated with notable colleagues, including Myung Seop Kim and Hyun S Kang. Their combined expertise has fostered an environment of innovation and creativity, leading to significant advancements in their field.

Conclusion

Hee K Park's contributions to the fabrication of bipolar transistors exemplify the impact of innovative thinking in technology. His work not only enhances the performance of electronic devices but also sets a foundation for future advancements in semiconductor technology.

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