The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1989
Filed:
Sep. 26, 1988
Applicant:
Inventors:
Assignee:
Samsung Semiconductor & Telecommunication Co., Ltd., Gumi City, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 32 ; 57 35 ; 14DI / ;
Abstract
Present invention relates to the fabrication method of the bipolar transistor. With this method the emitter of high-concentrated n-type is contacted closely to the extrinsic base of high-concentrated p-type. This structure is obtained by making the emitter of the bipolar transistor be self- aligned by the side wall under-cut of the nitride layer using double layers of the low temperature oxide and the nitride layer.