Seoul, South Korea

Hee K Cheon

This inventor holds 1 USPTO granted patent. Top assignee: Hyundai Electronics Industries Co. Ltd.. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hee K Cheon. Retrieved from https://idiyas.com/inventor/hee-k-cheon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 60(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Hee K Cheon: Innovator in Semiconductor Technology

Introduction

Hee K Cheon is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in methods that enhance the performance of high resistive polysilicon layers.

Latest Patents

Hee K Cheon holds a patent for a method titled "Method for maintaining the resistance of a high resistive polysilicon." This innovative method involves depositing a passivation layer on a semiconductor structure that has a high resistance value polysilicon layer. The process includes sequentially depositing a silicon oxide layer and a silicon nitride layer on the polysilicon layer. The passivation layer is then annealed with oxygen plasma, followed by heating in the presence of a conditioning gas to maintain the resistance of the high resistive polysilicon layer.

Career Highlights

Hee K Cheon is associated with Hyundai Electronics Industries Co. Ltd., where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of more efficient and reliable semiconductor devices.

Collaborations

Hee K Cheon has collaborated with notable colleagues, including Hyung C Hah and Jung Tae Kim, who have also contributed to advancements in semiconductor technology.

Conclusion

Hee K Cheon's innovative methods in semiconductor technology demonstrate his commitment to enhancing the performance of electronic devices. His contributions are vital to the ongoing evolution of the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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