This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2007.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2007
Title: Hee-Jung Yang: Innovator in Thin Film Transistor Technology
Introduction
Hee-Jung Yang is a prominent inventor based in Namyangju, South Korea. She has made significant contributions to the field of thin film transistors, particularly through her innovative patent that enhances the performance and reliability of these devices.
Latest Patents
Hee-Jung Yang holds a patent for a "Thin film transistor substrate and method for forming metal wire thereof." This invention relates to a thin film transistor substrate that incorporates self-assembled monolayers between the substrate and the metal wiring. The technology offers improved adhesion and anti-diffusion capabilities, making it a valuable advancement in the field.
Career Highlights
Hee-Jung Yang is currently employed at Samsung Electronics Co., Ltd., where she continues to develop cutting-edge technologies. Her work has positioned her as a key player in the advancement of electronic materials and devices.
Collaborations
Hee-Jung has collaborated with notable colleagues, including Jae-Gab Lee and Chang-Oh Jeong, contributing to a dynamic research environment that fosters innovation.
Conclusion
Hee-Jung Yang's contributions to thin film transistor technology exemplify her commitment to innovation and excellence in her field. Her work continues to influence the development of advanced electronic materials.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile