Icheon-si, South Korea

Hea Jong Yang

This inventor holds 1 USPTO granted patent. Top assignee: Sk Hynic Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hea Jong Yang. Retrieved from https://idiyas.com/inventor/hea-jong-yang-53fz8uh7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hea Jong Yang: Innovator in Flash Memory Reliability

Introduction

Hea Jong Yang is a notable inventor based in Icheon-si, South Korea. He has made significant contributions to the field of flash memory technology. His innovative work focuses on enhancing the reliability of flash memory materials.

Latest Patents

Hea Jong Yang holds a patent for an "Apparatus and method of measuring reliability for flash memory material through a current measurement." This patent describes a reliability measuring apparatus that includes an oxide-nitride-oxide-alumina (ONOA) current measuring circuit. The circuit is designed to measure an ONOA current by applying an ONOA current measuring voltage to a selected word line coupled to a selected memory cell in a flash memory. Additionally, it features a reliability indicator generator that utilizes the ONOA current measured through the circuit to produce a reliability indicator. He has 1 patent to his name.

Career Highlights

Hea Jong Yang is currently employed at SK Hynix Inc., a leading semiconductor company. His work at SK Hynix has allowed him to focus on advancing flash memory technologies and improving their reliability.

Collaborations

Hea Jong Yang collaborates with talented colleagues, including Nam Cheol Jeon and Tae Un Youn. Their combined expertise contributes to the innovative projects at SK Hynix.

Conclusion

Hea Jong Yang is a prominent figure in the field of flash memory technology, with a focus on reliability measurement. His contributions are vital for the advancement of memory materials, and his work continues to influence the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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