Suzhou, China

He Zhu

This inventor holds 1 USPTO granted patent. Top assignee: Suzhou Haider New Material Technology Co., Ltd.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: He Zhu. Retrieved from https://idiyas.com/inventor/he-zhu-e0t21vi4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: He Zhu - Innovator in Shock Insulation Technology

Introduction

He Zhu is a notable inventor based in Suzhou, China. He has made significant contributions to the field of shock insulation technology. His innovative approach has led to the development of a unique core material designed to enhance shock insulation performance.

Latest Patents

He Zhu holds a patent for a core material for shock insulation support, which includes a shock insulation support having a friction core and a preparation method for it. The core material comprises steel shot, zirconia particles, and rubber particles in specific weight proportions. This invention is designed to dissipate earthquake energy through a dry friction energy dissipation mechanism, providing high damping and excellent shock insulation performance.

Career Highlights

He Zhu is associated with Suzhou Haider New Material Technology Co., Ltd., where he applies his expertise in material technology. His work focuses on developing advanced materials that improve safety and performance in various applications.

Collaborations

He collaborates with talented individuals such as Jun Yang and Zhifeng Wu, contributing to innovative projects within his company.

Conclusion

He Zhu's contributions to shock insulation technology exemplify the impact of innovative thinking in material science. His patent reflects a commitment to enhancing safety and performance in engineering applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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