This inventor holds 1 USPTO granted patent. Top assignee: China Academy of Space Technology. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: He Lv and SiC MOSFET Radiation-Effect Testing.
Introduction
He Lv is an inventor based in Beijing, China, whose patent work addresses testing the radiation tolerance of silicon carbide (SiC) MOSFET devices. His listed patent is associated with the China Academy of Space Technology.
Latest Patents
Lv is named on one patent, 1 patent: “Method for Testing Total Dose Effect of SiC MOSFET Device.” The method evaluates a device through sequential testing before irradiation, pre-irradiation annealing, irradiation, post-irradiation annealing, and analysis of the resulting test data. It separately measures threshold-voltage shifts associated with radiation-induced defects and near-interface trap charges, then analyzes the results to assess the device’s resistance to total-dose effects. This assessment can help guide efforts to strengthen the device.
Career Highlights
The available information connects Lv’s patent work with the China Academy of Space Technology and the evaluation of SiC MOSFET performance under radiation exposure.
Collaborations
The listed coworkers are Qingkui Yu and He Wang. The provided information does not specify their roles in the patent or the extent of their collaboration with Lv.
Conclusion
He Lv’s patent presents a structured approach to measuring and analyzing total-dose radiation effects in SiC MOSFET devices, supporting their evaluation and potential reinforcement.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile