Hau-Yuan Huang

Title: Innovator Spotlight: Hau-Yuan Huang

Introduction: Hau-Yuan Huang is a notable inventor based in Zhubei, Taiwan. With a focus on semiconductor technology, he has made significant contributions to the field through his innovative patents. His work exemplifies the intersection of engineering and cutting-edge technology, which plays a crucial role in modern electronics.

Latest Patents: Hau-Yuan Huang holds a patent for an NMOS structure and its manufacturing method. This patent describes a detailed architecture for the NMOS structure, which includes a semiconductor substrate, dielectric structure, source and drain doped regions, a channel region, a gate structure, and two isolation P-type wells. The design allows for the effective definition of an active region within the semiconductor substrate, enhancing the performance of electronic devices.

Career Highlights: Hau-Yuan Huang works with United Microelectronics Corporation, a leading company in the semiconductor manufacturing industry. His tenure at this prestigious organization has allowed him to refine his skills and contribute to the development of innovative technologies that push the boundaries of semiconductor design.

Collaborations: Throughout his career, Hau-Yuan Huang has collaborated with notable colleagues in the field, such as Chia-Chen Tsai and Jia-Bin Yeh. These professional relationships have fostered a productive environment for innovation and development, furthering advancements in semiconductor technology.

Conclusion: Hau-Yuan Huang's contributions to the field of semiconductor technology through his patent for the NMOS structure showcase his talent and dedication as an inventor. His work at United Microelectronics Corporation and collaboration with fellow inventors highlight the importance of teamwork and innovation in advancing technology. As the semiconductor industry continues to evolve, innovations like those from Hau-Yuan Huang will play a key role in shaping the future.