Kawasaki, Japan

Harumi Abe

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Kioxia Corporation. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Harumi Abe. Retrieved from https://idiyas.com/inventor/harumi-abe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Harumi Abe: Innovator in Semiconductor Technology

Introduction

Harumi Abe is a prominent inventor based in Kawasaki, Japan. She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative spirit and technical expertise.

Latest Patents

Her latest patents include a semiconductor memory device that features a control circuit designed to change the drive capability of an output circuit. This device is equipped with an output pin that connects to a memory controller, allowing for voltage signals to be output in accordance with data bits. Additionally, she has developed a semiconductor device that incorporates multiple pads and output drivers, along with calibration mechanisms to ensure optimal performance.

Career Highlights

Harumi Abe is currently employed at Kioxia Corporation, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.

Collaborations

Throughout her career, she has collaborated with notable colleagues such as Shouichi Ozaki and Kazuhiko Satou, contributing to a dynamic and innovative work environment.

Conclusion

Harumi Abe's contributions to semiconductor technology reflect her dedication and expertise in the field. Her patents not only highlight her innovative capabilities but also pave the way for future advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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