Haruhiko Matsukasa

Title: Haruhiko Matsukasa: Innovator in Epitaxial Wafer Technology

Introduction

Haruhiko Matsukasa is a prominent inventor based in Osaka, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of epitaxial wafers for heterojunction type field effect transistors (FETs). His innovative work has led to advancements that are crucial for modern electronic devices.

Latest Patents

Matsukasa holds a patent for an epitaxial wafer designed for heterojunction type FETs. This patent includes a unique structure comprising an AlN primary layer, a stepwisely composition-graded buffer layer structure, a superlattice buffer layer structure, a GaN channel layer, and a nitride semiconductor electron supply layer. The design is meticulously crafted to enhance the performance of FETs, making it a valuable asset in the semiconductor industry. He has 1 patent to his name.

Career Highlights

Haruhiko Matsukasa is associated with Sharp Kabushiki Kaisha Corporation, where he has been instrumental in driving innovation in semiconductor technologies. His work has not only contributed to the company's success but has also positioned him as a key figure in the field of electronics.

Collaborations

Matsukasa has collaborated with notable colleagues such as Masayuki Hoteida and Nobuaki Teraguchi. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Haruhiko Matsukasa's contributions to the field of semiconductor technology, particularly through his patented innovations, highlight his role as a leading inventor. His work continues to influence the development of advanced electronic devices, showcasing the importance of innovation in the industry.