Paoli, PA, United States of America

Harshad Mehta

This inventor holds 1 USPTO granted patent. Top assignee: Silicon Power Corporation. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Harshad Mehta. Retrieved from https://idiyas.com/inventor/harshad-mehta-fes4m2c5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Harshad Mehta: Innovator in Power Electronics

Introduction

Harshad Mehta is a notable inventor based in Paoli, Pennsylvania, recognized for his contributions to power electronics. He has developed innovative technologies that enhance the efficiency and functionality of power devices.

Latest Patents

Harshad Mehta holds a patent for a "Power thyristor with MOS gated turn-off and MOS-assisted turn-on." This invention features a cellular emitter structure, where each cell integrates a FET-assisted turn-on gate. When a turn-on gate voltage is applied, it allows the thyristor cell to be activated effectively, showcasing a significant advancement in power control technology.

Career Highlights

Mehta is currently employed at Silicon Power Corporation, where he continues to work on cutting-edge technologies in the field of power electronics. His expertise and innovative mindset have contributed to the company's reputation for excellence in power solutions.

Collaborations

Harshad Mehta collaborates with talented professionals in his field, including his coworker Dante E Piccone. Their combined efforts aim to push the boundaries of power electronics and develop new solutions for various applications.

Conclusion

Harshad Mehta's work in power electronics exemplifies the spirit of innovation and dedication to advancing technology. His contributions, particularly through his patented inventions, have the potential to impact the industry significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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