San Jose, CA, United States of America

Harold F Winters

This inventor holds 4 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1978-1980.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Harold F Winters. Retrieved from https://idiyas.com/inventor/harold-f-winters

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 4

Forward Citations = 209(Granted Patents)


Company Filing History:


Years Active: 1978-1980

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4 patents (USPTO):Explore Patents

Title: Harold F Winters: Innovator in Etching Technologies

Introduction

Harold F Winters is a notable inventor based in San Jose, CA. He has made significant contributions to the field of etching technologies, holding a total of 4 patents. His work primarily focuses on methods that utilize radiation and noble gas halides for etching processes.

Latest Patents

Among his latest patents are two innovative methods: "Etching method employing radiation and noble gas halide," which describes a technique for etching using radiation and a gas, and "Etching method using noble gas halides," which outlines a method for etching with noble gas halides. These patents reflect his commitment to advancing etching technology.

Career Highlights

Harold is currently employed at International Business Machines Corporation, commonly known as IBM. His role at IBM allows him to collaborate with other talented professionals in the field, further enhancing his contributions to technology.

Collaborations

Some of his notable coworkers include Brian N Chapman and John W Coburn. Their collaborative efforts contribute to the innovative environment at IBM.

Conclusion

Harold F Winters is a distinguished inventor whose work in etching technologies has led to multiple patents and advancements in the field. His contributions continue to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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