Harish Y Penmethsa

Title: Harish Y. Penmethsa and High-Aspect-Ratio PVD Deposition.

Introduction

Harish Y. Penmethsa is an inventor based in Dublin, California, and is associated with Applied Materials, Inc. His patent work addresses physical vapor deposition (PVD) technology for depositing barrier and seed layers in high-aspect-ratio features.

Latest Patents

The supplied information identifies one patent associated with Penmethsa: “Multicathode PVD System for High Aspect Ratio Barrier Seed Deposition.” The invention describes a PVD chamber with a rotating workpiece pedestal and two targets made of the same material. The targets define separate processing zones at different distances from the pedestal, while a system controller simultaneously controls the voltage bias applied to each target. The approach is designed to support barrier and seed deposition in high-aspect-ratio features. Penmethsa is credited with 1 patent in the information provided.

Career Highlights

Penmethsa’s listed work connects him with Applied Materials, Inc., a company active in semiconductor manufacturing equipment. His patent focuses on coordinating multiple targets and their operating conditions within a PVD chamber.

Collaborations

Ming-Jui Li is identified as a coworker associated with Penmethsa. The supplied information does not specify their roles or the details of any joint work.

Conclusion

Harish Y. Penmethsa’s identified patent concerns a multicathode PVD system intended to improve barrier and seed deposition in high-aspect-ratio features.