Wuhan, China

Haojie Song

USPTO Granted Patents = 3 

 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2022-2024

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3 patents (USPTO):Explore Patents

Title: Haojie Song - Innovator in 3D Memory Device Technology

Introduction

Haojie Song is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory device technology, particularly in the development of three-dimensional (3D) memory devices. With a total of 3 patents, his work has garnered attention for its innovative approaches and practical applications.

Latest Patents

Haojie Song's latest patents focus on interconnect structures of three-dimensional memory devices. One of his notable inventions describes embodiments of 3D memory devices and methods for forming the same. In this invention, a 3D memory device includes a substrate, a memory stack, a channel structure, a channel local contact, a slit structure, and a staircase local contact. The memory stack consists of interleaved conductive layers and dielectric layers positioned above the substrate. The channel structure extends vertically through the memory stack, while the channel local contact is situated above and in contact with the channel structure. The slit structure also extends vertically through the memory stack, and the staircase local contact is positioned above and in contact with one of the conductive layers at a staircase structure on the edge of the memory stack. Notably, the upper ends of the channel local contact, the slit structure, and the staircase local contact are flush with one another.

Another patent by Haojie Song involves a memory stack that includes interleaved conductive layers and dielectric layers formed by replacing sacrificial layers with conductive layers through a slit opening. This invention also details the formation of a first source contact portion in the slit opening, along with the simultaneous creation of a channel local contact opening and a staircase local contact opening through a local dielectric layer. This innovative approach enhances the efficiency and functionality of 3D memory devices.

Career Highlights

Haojie Song is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of 3D memory devices, making them more efficient and effective for various applications.

Collaborations

Haojie collaborates with talented coworkers, including Kun Zhang and Kun Bao, who contribute to the innovative environment at Yangtze Memory Technologies Co., Ltd. Their combined expertise fosters a culture of creativity and technological advancement.

Conclusion

Haojie Song is a

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