Anhui, China

Haojie Sang

This inventor holds 1 USPTO granted patent. Top assignee: Hefei University of Technology. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Haojie Sang. Retrieved from https://idiyas.com/inventor/haojie-sang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Haojie Sang: Innovator in Electromagnetic Stamping Technology

Introduction

Haojie Sang is a notable inventor based in Anhui, China. He has made significant contributions to the field of electromagnetic stamping technology. His innovative approach has led to the development of a unique method and device that enhances the efficiency of stamping processes.

Latest Patents

Haojie Sang holds a patent for an "Electromagnetic Stamping Method and Device." This patent outlines a method that involves dividing a blank holder of a stamping device into multiple areas based on the contour characteristics of the workpiece. The method includes setting a blank holder force function over time for each area, collecting force data, calculating errors, and controlling the blank holder force to achieve optimal stamping results.

Career Highlights

Haojie Sang is affiliated with Hefei University of Technology, where he contributes to research and development in engineering and technology. His work focuses on improving manufacturing processes through innovative techniques.

Collaborations

Haojie has collaborated with colleagues Lei Li and Haihong Huang, who share his passion for advancing technology in their respective fields.

Conclusion

Haojie Sang's contributions to electromagnetic stamping technology exemplify the impact of innovation in manufacturing. His patent reflects a commitment to enhancing efficiency and precision in industrial processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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