This inventor holds 1 USPTO granted patent. Top assignees: Inventec (Pudong) Technology Corporation, Inventec Corp.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 684 
1 out of 1,643 
Years Active: 2026
Title: Hao-Hsiang Wang: Innovator in Frequency Selective Surface Structures
Introduction
Hao-Hsiang Wang is a notable inventor based in Taipei City, Taiwan. He has made significant contributions to the field of frequency selective surface structures, showcasing his innovative spirit and technical expertise.
Latest Patents
Hao-Hsiang Wang holds a patent for a frequency selective surface structure. This invention includes a substrate and at least one conductive layer, which features four central double-frequency patches arranged in a 2×2 array. Each patch is polygonal in shape and includes a central corner part, multiple outer corner parts, and notches located on the outer corners. This design enhances the functionality of the conductive layer, making it a valuable advancement in the field.
Career Highlights
Throughout his career, Hao-Hsiang Wang has worked with prominent companies such as Inventec Technology Corporation and Inventec Corp. His experience in these organizations has allowed him to refine his skills and contribute to various innovative projects.
Collaborations
Hao-Hsiang Wang has collaborated with Po-Han Chen, further expanding his network and enhancing his contributions to the field of technology.
Conclusion
Hao-Hsiang Wang's work in frequency selective surface structures exemplifies his innovative approach and dedication to advancing technology. His contributions continue to influence the industry and inspire future inventors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile