Hao Ding

Title: Hao Ding - Innovator in Vertical NAND Technology

Introduction

Hao Ding is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of vertical NAND devices. His innovative approach has led to advancements that enhance memory storage capabilities.

Latest Patents

Hao Ding holds a patent for a "Vertical NAND device containing peripheral devices on epitaxial semiconductor pedestal." This multilevel structure features a stack of alternating electrically conductive layers and insulator layers situated over a semiconductor substrate. The design includes an array of memory stack structures located within memory openings through the stack. Notably, an epitaxial semiconductor pedestal is aligned with a single crystalline substrate semiconductor material, ensuring optimal performance. The contact via structures for the semiconductor devices on the pedestal can extend to less than the thickness of the stack, showcasing the efficiency of his design.

Career Highlights

Throughout his career, Hao Ding has been associated with Sandisk Technologies Inc., where he has played a crucial role in advancing semiconductor technologies. His work has not only contributed to the company's success but has also positioned him as a key figure in the industry.

Collaborations

Hao Ding has collaborated with notable colleagues, including Masahiro Yaegashi and Shigehiro Fujino. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Hao Ding's contributions to vertical NAND technology exemplify his commitment to innovation in the semiconductor field. His patent and collaborative efforts highlight his role as a leading inventor in this dynamic industry.