Hao-Cheng Chang

Title: Hao-Cheng Chang: Innovator in Non-Volatile Memory Technology

Introduction

Hao-Cheng Chang is a prominent inventor based in Chu-Pei, Taiwan. He is recognized for his contributions to the field of non-volatile memory technology. With a focus on innovative solutions, Chang has developed a unique approach to memory cell design.

Latest Patents

Chang holds a patent for a "Single-gate non-volatile memory and operation method thereof." This invention features a transistor and capacitor structure embedded in a semiconductor substrate. The design includes a first electrically-conductive gate, a first dielectric layer, and multiple ion-doped regions. The capacitor structure consists of a second electrically-conductive gate, a second dielectric layer, and a second ion-doped region. The interconnected gates form a single floating gate of a memory cell. The operation method utilizes a reverse bias to facilitate reading, writing, and erasing operations. This innovative approach reduces absolute voltage, the area of the voltage booster circuit, and current consumption.

Career Highlights

Hao-Cheng Chang is currently employed at Yield Microelectronics Corp., where he continues to advance his research and development efforts. His work has significantly impacted the field of semiconductor technology, particularly in memory solutions.

Collaborations

Chang collaborates with notable colleagues, including Hsin-Chang Lin and Wen-Chien Huang. Their combined expertise fosters a productive environment for innovation and development.

Conclusion

Hao-Cheng Chang's contributions to non-volatile memory technology exemplify his commitment to innovation. His patent and ongoing work at Yield Microelectronics Corp. highlight his role as a key figure in the advancement of semiconductor technology.