Anyang, South Korea

Hanyoung Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2021.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Hanyoung Lee - Innovator in Semiconductor Memory Technology.

Introduction

Hanyoung Lee is a prominent inventor based in Anyang, South Korea. He has made significant contributions to the field of semiconductor memory devices, showcasing his expertise and innovative spirit.

Latest Patents

Hanyoung Lee holds a patent for a three-dimensional semiconductor memory device. This invention includes a substrate and an electrode structure with vertically stacked electrodes, each featuring a pad portion. The design incorporates electrode separation structures that penetrate the electrode structure and are spaced apart in a second direction. Additionally, the device includes contact plugs that are coupled to the pad portions, comprising both first and second contact plugs that are arranged differently in the second direction. This innovative approach enhances the functionality and efficiency of semiconductor memory devices.

Career Highlights

Hanyoung Lee is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of semiconductor technology, contributing to advancements that impact various electronic devices.

Collaborations

Hanyoung Lee has collaborated with notable colleagues, including Jibong Park and Young-Bae Yoon. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Hanyoung Lee's contributions to semiconductor memory technology exemplify his dedication to innovation. His patent and work at Samsung Electronics Co., Ltd. highlight his role as a key player in advancing technology in this field.

Profile summary based on public USPTO records.
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