Shanghai, China

Hanyi Huang

This inventor holds 4 USPTO granted patents and 9 published patent applications. Top assignee: Zing Semiconductor Corporation. Active years: 2022-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hanyi Huang. Retrieved from https://idiyas.com/inventor/hanyi-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 4.2

ph-index = 1


Company Filing History:


Years Active: 2022-2024

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4 patents (USPTO):Explore Patents

Title: Hanyi Huang: Innovator in Semiconductor Technology

Introduction

Hanyi Huang is a prominent inventor based in Shanghai, China, known for his contributions to semiconductor technology. With a total of four patents to his name, Huang has made significant advancements in the field, particularly in methods related to semiconductor crystal growth.

Latest Patents

Huang's latest patents include a semiconductor crystal growth method and device. This innovative method involves obtaining the initial position of a graphite crucible during its first use in the semiconductor crystal growth process. It also includes determining the current production batch of the graphite crucible, which indicates the number of growth processes it has undergone. By loading polysilicon raw materials into a quartz crucible that is sleeved in the graphite crucible, Huang's method ensures the stability of the silicon melt liquid surface while maintaining the initial position of the graphite crucible. This invention enhances the stability of parameters in the crystal pulling process, ultimately improving both the speed and quality of crystal growth.

Another notable patent is a method for calculating the liquid-solid interface morphology during the growth of an ingot. This method involves providing a wafer, selecting multiple sampling locations, and detecting electrical resistivity at these locations. By calculating height differences based on the detected resistivity, Huang's method illustrates the morphology of the liquid-solid interface. This approach is advantageous due to its ease of operation and low cost.

Career Highlights

Hanyi Huang is currently associated with Zing Semiconductor Corporation, where he continues to innovate in semiconductor technologies. His work has positioned him as a key figure in the industry, contributing to advancements that have practical applications in various electronic devices.

Collaborations

Huang collaborates with notable colleagues such as Weimin Shen and Gang Wang, who contribute to his research and development efforts in semiconductor technology.

Conclusion

Hanyi Huang's innovative work in semiconductor technology, particularly in crystal growth methods, showcases his significant contributions to the field. His patents reflect a commitment to enhancing the efficiency and quality of semiconductor production.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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