Daejeon, South Korea

Hanyeoreum Bae

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Hanyeoreum Bae: Innovator in Hybrid Memory Systems

Introduction

Hanyeoreum Bae is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of memory systems, particularly through his innovative patent. His work focuses on enhancing the efficiency and performance of memory technologies.

Latest Patents

Hanyeoreum Bae holds a patent for a "Hybrid memory system and accelerator including the same." This invention features an accelerator that comprises a processor and a hybrid memory system. The hybrid memory system integrates a resistance-based non-volatile memory and a DRAM that serves as a cache for the non-volatile memory. Additionally, it includes a non-volatile memory controller that manages both memory types, a memory controller that processes requests from the processor, and a memory channel that connects these components.

Career Highlights

Bae is affiliated with the Korea Advanced Institute of Science and Technology, where he continues to push the boundaries of memory technology. His work has garnered attention for its potential applications in various computing environments.

Collaborations

Hanyeoreum Bae collaborates with notable colleagues, including Myoungsoo Jung and Jie Zhang. Their combined expertise contributes to the advancement of innovative memory solutions.

Conclusion

Hanyeoreum Bae's contributions to hybrid memory systems exemplify the importance of innovation in technology. His patent reflects a significant step forward in memory architecture, showcasing his role as a leading inventor in this field.

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