Company Filing History:
Years Active: 2018-2022
Title: Innovations of Hanwei Gao in Perovskite Materials
Introduction
Hanwei Gao is a prominent inventor based in Tallahassee, Florida. He has made significant contributions to the field of materials science, particularly in the development of bandgap-tunable perovskite materials. With a total of seven patents to his name, Gao's work is paving the way for advancements in solar energy and light-emitting technologies.
Latest Patents
Gao's latest patents focus on methods of making bandgap-tunable perovskite materials. These compositions are characterized by the formula CsPb(AB), where A and B are halogens. The innovative mixed halide perovskite composition features a morphology that suppresses phase segregation, thereby stabilizing a tuned bandgap. This technology allows for the creation of perovskite materials in the form of nanocrystals embedded in a non-perovskite matrix. Additionally, his patents include applications for solar cells and light-emitting diodes that utilize these advanced mixed perovskite compositions.
Career Highlights
Gao is affiliated with the Florida State University Research Foundation, Inc., where he conducts his research and development. His work has garnered attention for its potential applications in renewable energy and optoelectronics. The innovative nature of his patents reflects his commitment to advancing technology in these critical areas.
Collaborations
Throughout his career, Han