The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Sep. 22, 2016
Applicant:
Florida State University Research Foundation, Inc., Tallahassee, FL (US);
Inventors:
Hanwei Gao, Tallahassee, FL (US);
Biwu Ma, Tallahassee, FL (US);
Yichuan Ling, Tallahassee, FL (US);
Zhao Yuan, Tallahassee, FL (US);
Assignee:
Florida State University Research Foundation, Inc., Tallahassee, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/54 (2006.01); C09K 11/06 (2006.01); C07C 209/68 (2006.01); C09K 11/02 (2006.01); C07C 211/63 (2006.01); H05B 33/14 (2006.01); C09K 11/66 (2006.01); H01L 51/42 (2006.01); H01L 51/00 (2006.01); H01L 51/50 (2006.01); B82Y 40/00 (2011.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
C07C 209/68 (2013.01); C07C 211/63 (2013.01); C09K 11/025 (2013.01); C09K 11/06 (2013.01); C09K 11/664 (2013.01); H01L 51/4246 (2013.01); H05B 33/14 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C09K 2211/10 (2013.01); C09K 2211/188 (2013.01); H01L 51/007 (2013.01); H01L 51/0037 (2013.01); H01L 51/0042 (2013.01); H01L 51/5012 (2013.01); H01L 2251/308 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11); Y10S 977/755 (2013.01); Y10S 977/896 (2013.01); Y10S 977/95 (2013.01);
Abstract
Provided herein are metal halide perovskite nanoplatelets, methods for making metal halide perovskite nanoplatelets, and devices and composite materials that include metal halide nanoperovskite nanoplatelets. The metal halide perovskite nanoplatelets may be stable at ambient temperature and pressure, thereby easing device fabrication.