Suwon, South Korea

Hansin Bae

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hansin Bae. Retrieved from https://idiyas.com/inventor/hansin-bae

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hansin Bae and His Patent for Substrate Processing

Introduction

Hansin Bae is an inventor based in Suwon, South Korea. His patent work includes a substrate processing apparatus, and he is associated with Samsung Electronics.

Latest Patents

Bae is named on one patent: Substrate Processing Apparatus. The invention describes a chamber containing a support member with separate center and edge bias electrodes. Each electrode is connected to its own power supply, which provides start and end voltages during a control period. The voltage change at the edge electrode is greater than the voltage change at the center electrode. This arrangement provides distinct electrical control for the center and edge regions of a substrate.

Career Highlights

Bae’s recorded patent portfolio consists of 1 patent. His work reflects an engineering focus on substrate-processing equipment and electrode control.

Collaborations

The supplied information identifies Hyunjae Lee and Hyun Bae Kim as Bae’s coworkers. It does not specify whether they collaborated with him on this patent.

Conclusion

Hansin Bae’s patent describes a substrate-processing apparatus that independently controls center and edge bias voltages, highlighting his contribution to semiconductor equipment innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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