Mesa, AZ, United States of America

Hanshuang Liang

This inventor holds 1 USPTO granted patent. Top assignee: Arizona State University. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hanshuang Liang. Retrieved from https://idiyas.com/inventor/hanshuang-liang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Innovations by Hanshuang Liang

Introduction

Hanshuang Liang is a notable inventor based in Mesa, AZ (US). He has made significant contributions to the field of strain measurement technology. His innovative approach has led to the development of a unique method for measuring in-plane strain on substrates.

Latest Patents

Hanshuang Liang holds 1 patent titled "Methods for in-plane strain measurement of a substrate." This patent describes a method for measuring and mapping in-plane strain on the surface of a substrate. The process involves forming a grating on the substrate's surface and using a focused laser to determine strain by analyzing the variation in grating wavelength. This technique allows for the production of high-resolution strain maps, as the induced strain correlates with changes in the grating wavelength.

Career Highlights

Liang is affiliated with Arizona State University, where he continues to advance his research in strain measurement technologies. His work has implications for various applications, including materials science and engineering.

Collaborations

Some of his notable coworkers include Hongbin Yu and Hanqing Jiang, who contribute to his research endeavors.

Conclusion

Hanshuang Liang's innovative methods for strain measurement represent a significant advancement in the field, showcasing his expertise and dedication to research. His contributions continue to influence the development of new technologies in substrate analysis.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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