Dresden, Germany

Hans Wirth

This inventor holds 1 USPTO granted patent. Top assignee: Daimler Chrysler Ag. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans Wirth. Retrieved from https://idiyas.com/inventor/hans-wirth

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Hans Wirth

Introduction

Hans Wirth is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of microelectronics, particularly in the production of semiconductor components. His innovative methods have paved the way for advancements in technology, especially in materials like silicon carbide.

Latest Patents

Wirth holds a patent for a method for producing a microelectronic semiconductor component. This invention focuses on creating doped areas in the semiconductor through ion implantation. Additionally, it addresses the elimination of radiation damage in the semiconductor by using electromagnetic rays. The method involves exposing the semiconductor to pulse-like optical radiation and heating it, particularly in the doped areas.

Career Highlights

Hans Wirth is associated with Daimler Chrysler AG, where he has applied his expertise in semiconductor technology. His work has been instrumental in enhancing the efficiency and performance of microelectronic components.

Collaborations

Wirth has collaborated with esteemed colleagues such as Wolfgang Skorupa and Ekkehard Niemann. Their combined efforts have contributed to the advancement of semiconductor technologies.

Conclusion

Hans Wirth's innovative methods in semiconductor production highlight his significant role in the field of microelectronics. His contributions continue to influence the development of advanced technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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