Munich, Germany

Hans Scholl

This inventor holds 1 USPTO granted patent. Top assignee: G.m. Pfaff Aktiengesellschaft. Active years: 1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans Scholl. Retrieved from https://idiyas.com/inventor/hans-scholl-zd2mnv84

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Hans Scholl

Introduction

Hans Scholl is a notable inventor based in Munich, Germany. He has made significant contributions to the field of sewing technology. His innovative approach has led to the development of a unique sewing machine process that enhances efficiency in garment manufacturing.

Latest Patents

Hans Scholl holds a patent for a "Process and automatic sewing machine for sewing a flap with a rough." This invention includes a preparation station that features a fabric support plate, a folding plate, and a positioning support for a flap of a flap pocket. The design allows for the fabric part to be supported effectively while the pocket flap is lined and positioned accurately. The sewing machine can then sew the pocket cut onto the fabric part, ensuring a precise and efficient process.

Career Highlights

Throughout his career, Hans Scholl has worked with G.m. Pfaff Aktiengesellschaft, a company renowned for its advancements in sewing technology. His work has contributed to the company's reputation for innovation and quality in the textile industry. Scholl's patent reflects his commitment to improving manufacturing processes and enhancing the functionality of sewing machines.

Conclusion

Hans Scholl's contributions to sewing technology through his innovative patent demonstrate his expertise and dedication to the field. His work continues to influence the industry, showcasing the importance of innovation in manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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