This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Anaren, Inc.. Active years: 2015.
Company Filing History:
Years Active: 2015
Title: The Innovations of Hans P. Ostergaard
Introduction
Hans P. Ostergaard is an accomplished inventor based in East Syracuse, NY (US). He is known for his contributions to the field of radio frequency (RF) technology. With a focus on high power RF circuits, Ostergaard has made significant advancements that enhance the performance and efficiency of RF devices.
Latest Patents
Ostergaard holds a patent for a high power RF circuit. This invention is directed to an RF device that includes a ceramic layer characterized by a specific dielectric constant. The RF circuit arrangement features a predetermined geometry and electrical characteristics. The ceramic layer is designed to dissipate thermal energy generated by the RF circuit across its entire surface area. Additionally, the first dielectric layer comprises a thermoplastic material with a predetermined thickness and dielectric constant. The electrical characteristics of the RF circuit are influenced by the dielectric constant of the ceramic layer, while the softness of the thermoplastic material is dependent on the operating temperature of the RF device. He has 1 patent to his name.
Career Highlights
Throughout his career, Ostergaard has worked with notable companies in the technology sector. He has been associated with Anaren, Inc. and TTM Technologies Inc., where he contributed to various innovative projects. His expertise in RF technology has made him a valuable asset in these organizations.
Collaborations
Ostergaard has collaborated with talented individuals in his field, including Chong Mei and Michael Len. These partnerships have fostered a creative environment that has led to the development of cutting-edge technologies.
Conclusion
Hans P. Ostergaard's contributions to RF technology through his innovative patent and collaborations highlight his significant role in advancing this field. His work continues to influence the development of efficient RF devices.