Allentown, PA, United States of America

Hans P Hey

This inventor holds 1 USPTO granted patent. Top assignee: At&t Bell Laboratories. Active years: 1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans P Hey. Retrieved from https://idiyas.com/inventor/hans-p-hey-zin4f6aj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: The Innovations of Hans P. Hey

Introduction

Hans P. Hey is a notable inventor based in Allentown, PA (US). He has made significant contributions to the field of semiconductor technology. His work primarily focuses on the metallization processes used in semiconductor devices.

Latest Patents

Hans P. Hey holds a patent for a process titled "Metallization for Semiconductor Devices." This innovative patent describes a low-temperature chemical vapor deposition process that encapsulates aluminum conductors on the surface of a silicon substrate. The result is the formation of bimetallic conductors, with tungsten being the desirable refractory material used in the process. He has 1 patent to his name.

Career Highlights

Hans P. Hey has had a distinguished career at AT&T Bell Laboratories, where he has contributed to various projects in semiconductor technology. His expertise in low-temperature processes has paved the way for advancements in the field.

Collaborations

Throughout his career, Hans has collaborated with notable colleagues, including Desu Seshubabu and Ashok K. Sinha. These collaborations have further enhanced the impact of his work in the semiconductor industry.

Conclusion

Hans P. Hey's contributions to semiconductor technology through his innovative patent and work at AT&T Bell Laboratories highlight his importance in the field. His advancements continue to influence the development of modern electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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